IGBT Datasheet(PDF) - UC2727J - Texas Instruments

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IGBT Folha de dados, PDF

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Palavra-chave pesquisada : 'IGBT' - Total: 28 (1/2) Pages

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Texas Instruments	UC2727J	329Kb/8P	Isolated High Side IGBT Driver
	UC1727	387Kb/7P	Isolated High Side IGBT Driver
	TPS65563	596Kb/16P	INTEGRATED PHOTO FLASH CHARGER AND IGBT DRIVER
	TPS65563A	807Kb/18P	INTEGRATED PHOTO FLASH CHARGER AND IGBT DRIVER
	TPS65573	425Kb/13P	INTEGRATED PHOTO FLASH CHARGER AND IGBT DRIVER
	TPS65561	568Kb/16P	INTEGRATED PHOTO FLASH CHARGER AND IGBT DRIVER
	TPS65560	944Kb/13P	INTEGRATED PHOTO FLASH CHARGER AND IGBT DRIVER
	TPS65552A	404Kb/14P	INTEGRATED PHOTO FLASH CHARGER AND IGBT DRIVER
	ISO5500	1Mb/43P	ISO5500 2.5-A Isolated IGBT, MOSFET Gate Driver
	UCC5350-Q1	2Mb/47P	UCC5350-Q1 Single-Channel Isolated Gate Driver for SiC/IGBT and Automotive Applications REVISED AUGUST 2022
	UCC5350-Q1	2Mb/46P	UCC5350-Q1 Single-Channel Isolated Gate Driver for SiC/IGBT and Automotive Applications JUNE 2022
	UCC27532	989Kb/26P	2.5-A and 5-A, 35-VMAX VDD FET and IGBT Single-Gate Driver
	UCC27531	648Kb/35P	2.5-A and 5-A, 35-VMAX VDD FET and IGBT Single-Gate Driver
	UCC27537DBVR	1Mb/37P	2.5-A and 5-A, 35-VMAX VDD FET and IGBT Single-Gate Driver
	UCC27532-Q1	916Kb/26P	2.5-A and 5-A, 35-VMAX VDD FET and IGBT Single-Gate Driver
	ISO5851	1Mb/34P	High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features
	ISO5451	1Mb/38P	High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features
	UCC5871-Q1	1Mb/32P	UCC5871-Q1 30-A Isolated IGBT/SiC MOSFET Gate Driver with Advanced Protection Features for Automotive Applications DECEMBER 2022
	UCC5871-Q1	4Mb/116P	UCC5871-Q1 30-A Isolated IGBT/SiC MOSFET Gate Driver with Advanced Protection Features for Automotive Applications APRIL 2021
	ISO5452	1Mb/37P	High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features

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O que é IGBT

Um transistor bipolar de porta isolada (IGBT) é um tipo de dispositivo semicondutor de potência usado para controlar aplicações de alta tensão e alta corrente, como fontes de alimentação, acionamentos de motor e inversores. Ele combina a velocidade de comutação rápida de um transistor de junção bipolar (BJT) com a porta controlada por voltagem de um transistor de efeito de campo de óxido de óxido de metal (MOSFET).

O IGBT funciona usando um MOSFET como estágio de entrada e um transistor de junção bipolar como estágio de saída.

O portão do MOSFET é isolado do restante do dispositivo, o que permite a operação de alta tensão e maior confiabilidade.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.

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