Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
Shenzhen Huazhimei Semi...
|
HMG50N65T |
1Mb/8P |
650V /50A Trench Field Stop IGBT |
HM10N120T |
1Mb/8P |
1200V /10A Trench Field Stop IGBT |
HM6604BWKR |
1Mb/8P |
Complementary Enhancement Mode Field Effect Transistor |
HM25N135FT |
752Kb/9P |
1350V /25A Trench Field Stop IGBT |
HMG15N65 |
1Mb/10P |
650V /15A Trench Field Stop IGBT |
HM15N120AT |
1Mb/8P |
1200V /15A Trench Field Stop IGBT |
HM15N120FT |
1Mb/8P |
1200V /15A Trench Field Stop IGBT |
HMG60N65FT |
1Mb/8P |
650V /60A Trench Field Stop IGBT |
HMG75N65FT |
1Mb/7P |
650V /75A Trench Field Stop IGBT |
HM25N120FT |
1Mb/7P |
1200V /25A Trench Field Stop IGBT |
BSS84KR |
330Kb/4P |
P-Channel Enhancement Mode Field Effect Transistor |
BSS8402DW |
315Kb/6P |
Complementary Pair Enhancement Mode Field Effect Transistor |
HM2301BWKR |
411Kb/6P |
Dual P-Channel Enhancement Mode Field Effect Transistor |
HMG40N65T |
753Kb/4P |
650V 40A trench gate field cut-off type IGBT |
HM4618SP |
665Kb/6P |
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
HM603BK |
938Kb/8P |
N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. |
HM609BK |
2Mb/8P |
N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. |
HM1P10MR |
763Kb/5P |
P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |