D-S Datasheet(PDF) - SIA537EDJ - Vishay Telefunken

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D-S Folha de dados, PDF

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Palavra-chave pesquisada : 'D-S' - Total: 328 (1/17) Pages

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Telefunken	SIA537EDJ	398Kb/14P	N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
	SIR826ADP	381Kb/13P	N-Channel 80 V (D-S) MOSFET
	SI7454DDP	345Kb/13P	N-Channel 100 V (D-S) MOSFET
	SIR472DP	306Kb/7P	N-Channel 30-V (D-S) MOSFET
	SIS456DN	556Kb/13P	N-Channel 30 V (D-S) MOSFET
	SISA10DN	592Kb/13P	N-Channel 30 V (D-S) MOSFET
	SI1424ED	267Kb/12P	N-Channel 20 V (D-S) MOSFET
	SI2342DS	247Kb/8P	N-Channel 8 V (D-S) MOSFET
	SI3460DD	724Kb/11P	N-Channel 20 V (D-S) MOSFET
	SIA430DJ	207Kb/9P	N-Channel 20 V (D-S) MOSFET
	SI1070X	150Kb/8P	N-Channel 30 V (D-S) MOSFET
	SI4126DY	273Kb/10P	N-Channel 30-V (D-S) MOSFET
	SI4156DY	258Kb/10P	N-Channel 30-V (D-S) MOSFET
	SI7634BD	310Kb/13P	N-Channel 30-V (D-S) MOSFET
	SI8902AEDB	259Kb/11P	N-Channel 24 V (D-S) MOSFET
	SIE882DF	207Kb/10P	N-Channel 25-V (D-S) MOSFET
	SIR330DP	339Kb/13P	N-Channel 30 V (D-S) MOSFET
	SIR438DP	343Kb/13P	N-Channel 25-V (D-S) MOSFET
	SIR460DP	311Kb/13P	N-Channel 30-V (D-S) MOSFET
	SIR820DP	313Kb/13P	N-Channel 30 V (D-S) MOSFET

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O que é D-S

D-S é um dos termos comumente usados em componentes eletrônicos.

D-S significa fonte de drenagem e é usada em dispositivos semicondutores, como o MOSFET (transistor de efeito de campo de óxido de metal-óxido-semicondutor).

Um MOSFET é um dos dispositivos semicondutores representativos e é usado para controlar a corrente de acordo com a tensão.

Um MOSFET possui três pinos: portão, dreno e fonte, entre os quais D-s representa a distância entre dreno e fonte.

A distância D-S é um dos fatores que têm uma influência importante nas características do MOSFET.

A menor distância aumenta a força de tensão no dispositivo, o que aumenta a velocidade e o desempenho do MOSFET.

Portanto, a distância D-S é um dos fatores importantes que determinam o desempenho dos MOSFETs.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.

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