Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
EHAOAN.
|
HS1538B-D |
1Mb/8P |
Operating voltage: 2.2 v -5.5 |
Texas Instruments
|
TLV1701 |
1Mb/18P |
2.2-V to 36-V, microPower Comparator |
EHAOAN.
|
HS0038B-D |
1Mb/8P |
Operating voltage: 2.2 v -5.5 |
Texas Instruments
|
TLV1701-Q1 |
1Mb/27P |
2.2-V to 36-V, microPower Comparator |
TLV1701 |
1Mb/33P |
TLV170x 2.2-V to 36-V, microPower Comparator |
TLV1701-Q1 |
1Mb/29P |
TLV170x-Q1 2.2-V to 36-V, microPower Comparator |
TLV1702-Q1 |
1Mb/23P |
TLV170x-Q1 2.2-V to 36-V, microPower Comparator |
NXP Semiconductors
|
PBRP123ET |
112Kb/12P |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 2.2 kW Rev. 01-16 January 2008 |
Nexperia B.V. All right...
|
PBRN123ET |
268Kb/12P |
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 31 March 2021 |
PBRP123ET-Q |
269Kb/13P |
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 6 May 2021 |
NXP Semiconductors
|
PBRN123E |
159Kb/17P |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 2.2 k? Rev. 01-27 February 2007 |
Nexperia B.V. All right...
|
PBRP123ET |
267Kb/12P |
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 1 April 2021 |
PBRN123ET-Q |
270Kb/13P |
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 6 May 2021 |
PBRN123E_SER |
740Kb/17P |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW Rev. 01 - 27 February 2007 |
Texas Instruments
|
PTH04T260WAZ |
1Mb/36P |
3-A, 2.2-V to 5.5-V INPUT, NON-ISOLATED, |
Nexperia B.V. All right...
|
PDTB123ET |
374Kb/11P |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 3 - 22 September 2010 |
Texas Instruments
|
PTH04T261WAD |
1Mb/36P |
3-A, 2.2-V to 5.5-V INPUT, NON-ISOLATED, |
NXP Semiconductors
|
PDTD123E |
68Kb/10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW Rev. 01-8 April 2005 |
Nexperia B.V. All right...
|
PDTD123E_SER |
245Kb/11P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 02 - 16 November 2009 |
NXP Semiconductors
|
PDTD123E |
131Kb/10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓 Rev. 02-16 November 2009 |