Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
Nexperia B.V. All right...
|
PDTC123EMB |
960Kb/13P |
NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓 |
NXP Semiconductors
|
PDTC123E |
188Kb/14P |
NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓 2004 Aug 06 |
Transcom, Inc.
|
TC3143 |
124Kb/4P |
2.1 - 2.2 GHz 2W MMIC |
EHAOAN.
|
HS1538B-D |
1Mb/8P |
Operating voltage: 2.2 v -5.5 |
ADL Embedded Solutions
|
ADLQM67PC-2655LE |
242Kb/3P |
Intel Core i7, 2.2 GHz |
NXP Semiconductors
|
PBRP123ET |
112Kb/12P |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 2.2 kW Rev. 01-16 January 2008 |
PEMH20 |
283Kb/9P |
NPN/NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓 Rev. 04-15 November 2009 |
Nexperia B.V. All right...
|
PBRN123ET |
268Kb/12P |
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 31 March 2021 |
PBRP123ET-Q |
269Kb/13P |
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 6 May 2021 |
NXP Semiconductors
|
PBRN123E |
159Kb/17P |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 2.2 k? Rev. 01-27 February 2007 |
PEMH20_PUMH20 |
283Kb/9P |
NPN/NPN resistor-equipped transistors R1 = 2.2 k廓, R2 = 2.2 k廓 Rev. 04-15 November 2009 |
PEMH20 |
52Kb/9P |
NPN/NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm Rev. 03-14 February 2005 |
Nexperia B.V. All right...
|
PBRP123ET |
267Kb/12P |
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 1 April 2021 |
PBRN123ET-Q |
270Kb/13P |
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 6 May 2021 |
PBRN123E_SER |
740Kb/17P |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW Rev. 01 - 27 February 2007 |
SIRENZA MICRODEVICES
|
SZP-2026Z |
558Kb/12P |
2.2-2.7GHz 2W InGaP Amplifier |
List of Unclassifed Man...
|
PXI-7901 |
219Kb/2P |
PXI specifications Rev. 2.2 compliant |
EHAOAN.
|
HS0038B-D |
1Mb/8P |
Operating voltage: 2.2 v -5.5 |
Nexperia B.V. All right...
|
PDTB123ET |
374Kb/11P |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 3 - 22 September 2010 |
NXP Semiconductors
|
PDTD123E |
68Kb/10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW Rev. 01-8 April 2005 |