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EFFECT Folha de dados, PDF

Palavra-chave pesquisada : 'EFFECT' - Total: 42 (1/3) Pages
Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
Company Logo Img
Stanson Technology
STC6332 Datasheet pdf image
421Kb/9P
The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
ST2319SRG Datasheet pdf image
229Kb/8P
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STP9235 Datasheet pdf image
331Kb/6P
STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
ST2318SRG Datasheet pdf image
221Kb/7P
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STP4403 Datasheet pdf image
321Kb/6P
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
STP9434 Datasheet pdf image
314Kb/6P
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
ST3422A Datasheet pdf image
338Kb/6P
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STN4346 Datasheet pdf image
352Kb/7P
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4426 Datasheet pdf image
362Kb/6P
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP6308 Datasheet pdf image
420Kb/6P
STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4392 Datasheet pdf image
383Kb/7P
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4480 Datasheet pdf image
742Kb/6P
STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4850 Datasheet pdf image
532Kb/6P
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN1810 Datasheet pdf image
966Kb/7P
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4438 Datasheet pdf image
269Kb/6P
STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4546 Datasheet pdf image
363Kb/6P
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4435A Datasheet pdf image
311Kb/6P
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4931 Datasheet pdf image
334Kb/6P
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
ST2304SRG Datasheet pdf image
630Kb/6P
ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2341A Datasheet pdf image
582Kb/6P
ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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O que é EFFECT


O efeito de peças eletrônicas significa alterações físicas, elétricas e químicas de peças que podem ser causadas por vários fatores.

Por exemplo, as características elétricas de uma peça podem ser afetadas por mudanças ambientais ou as propriedades físicas de uma peça podem mudar devido a condições de uso.

Nas peças eletrônicas, o efeito é um dos fatores importantes para avaliar a confiabilidade das peças.

Dependendo do ambiente em que a peça é usada, pode ocorrer efeito, o que pode reduzir a vida útil da peça ou, em casos graves, danificar a função da peça.

Portanto, é importante selecionar e projetar peças considerando seu efeito.

Por exemplo, o efeito dos componentes eletrônicos pode ser afetado por fatores ambientais como alta temperatura, alta umidade, vibração, choque e radiação.

Os componentes usados ​​nesses ambientes devem ser resistentes ao ambiente, e os componentes com alta confiabilidade devem ser selecionados e projetados.

Portanto, ao selecionar ou projetar componentes eletrônicos, é importante garantir a confiabilidade dos componentes, considerando fatores ambientais como efeito.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.


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