Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
Infineon Technologies A...
|
BSC13DN30NSFD |
928Kb/11P |
OptiMOSTM3 Power-Transistor, 300 V Rev.2.1,2016-12-05 |
PTFB213004F |
740Kb/16P |
High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz Rev. 05.3, 2016-06-15 |
ICE5BR3995BZ |
2Mb/31P |
300 mA non-isolated ultra high-voltage buck evaluation board using ICE5BR3995BZ V 1.1 2022-08-05 |
PTFB213004F |
674Kb/16P |
High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz Rev. 05.2, 2010-12-09 |
PTFA043002E |
305Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 ??860 MHz Rev. 03.1, 2009-02-20 |
PTVA093002TC |
210Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 ??960 MHz Rev. 04, 2014-06-16 |